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Product Detailed Parameters
- Description：MOSFET POWERQFN 3X3 P -30V
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2060 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (3x3)
- Package / Case：8-PowerVDFN
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Overview
The DI028P03PT is a P-Channel Power MOSFET manufactured by Diotec Semiconductor. It features a QFN3x3 package with a drain-source voltage (VDSS) of -30 V and a continuous drain current (ID) of -28 A at 25°C. The device exhibits a typical on-state resistance (RDS(on)) of 6.7 mΩ at VGS = 10 V and ID = 20 A, with a maximum power dissipation (PD) of 40 W at 25°C. Key dynamic parameters include a total gate charge (Qg) of 30 nC, turn-on delay time of 11 ns, and fall time of 12 ns. The junction temperature range spans from -55°C to +150°C.
Feature Summary
- Compact QFN3x3 surface-mount package designed for space-constrained applications
- Low on-state resistance for efficient power handling
- Fast switching characteristics with low gate charge
- Compliant with RoHS directives and REACH regulations
Applications
- Power Management Units
- Battery powered devices
- Load Switches
- Polarity Protection circuits
Procurement Notes
Verify the specific ordering suffix against official Diotec documentation to confirm exact packaging and marking codes. Confirm compliance requirements such as RoHS exemption details or conflict mineral declarations directly with the manufacturer before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring high current density in a small footprint. Ensure thermal management strategies account for the 40 W power dissipation rating at 25°C case temperature. Verify that the gate drive voltage meets the threshold requirements for optimal RDS(on) performance.
Part Context
This part belongs to Diotec's P-Channel MOSFET lineup, utilizing silicon technology. It is categorized under commercial grade components intended for standard industrial and consumer electronics applications. The device is supplied in tape and reel packaging for automated assembly processes.
Replacement Considerations
Consult official Diotec substitution guides for verified alternatives. Cross-reference pinouts, electrical ratings, and thermal characteristics when evaluating potential replacement parts from other manufacturers.
