DI030N03D1

$0.69

Description：MOSFET DPAK N 30V 0.01OHM 175C
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8decc55bd10d Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET DPAK N 30V 0.01OHM 175C
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：14mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：940 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：40W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DI030N03D1

Overview

The DI030N03D1 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for commercial and industrial applications. It features a 30 V drain-source voltage rating and a continuous drain current of 30 A at 25°C case temperature. The device utilizes advanced trench technology to achieve a low on-state resistance of approximately 10 mΩ. With a maximum power dissipation of 40 W and a junction temperature range up to 175°C, it supports high-efficiency switching in compact designs.

Feature Summary

Advanced Trench Technology for optimized performance
Low on-state resistance to minimize conduction losses
Fast switching times with low gate charge
Avalanche rated capability for robust operation

Applications

DC/DC Converters
Power Supplies
DC Drives
Synchronous Rectifiers

Procurement Notes

Verify the specific ordering suffix against official Diotec documentation to confirm compliance requirements such as RoHS or REACH exemptions. Confirm that the component grade matches the intended commercial or industrial application standards. Ensure thermal management design accounts for the specified power dissipation limits under actual operating conditions.

Selection Notes

Select this component for circuits requiring a 30 V N-Channel MOSFET with high current handling capabilities. Consider the low gate charge and fast switching characteristics for high-frequency applications. Evaluate the thermal resistance from junction to case to ensure adequate heat sinking for the expected power dissipation levels in the target system.

Part Context

This part belongs to the Diotec Semiconductor N-Channel Power MOSFET family, utilizing TO-252AA (D-Pak) packaging. It is distinct from automotive-grade variants like the DI014N25D1-Q/-AQ, which are AEC-Q101 qualified. The standard version is intended for general commercial and industrial use rather than specialized automotive environments.