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Product Detailed Parameters
- Description：MOSFET POWERQFN 3X3 N 30V
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：38 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2300 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：28W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (3x3)
- Package / Case：8-PowerVDFN
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Overview
The DI032N03PTK is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a QFN3x3 package. It features a Drain-Source voltage (VDSS) of 30 V and a continuous Drain current (ID) of 32 A at TC = 25°C. The device exhibits a low on-state resistance (RDS(on)) of less than 5 mΩ at VGS = 10 V and ID = 20 A. Maximum power dissipation (PD) is rated at 28 W, with a junction temperature range from -55°C to +150°C. Single pulse avalanche energy (EAS) is specified as 45 mJ.
Feature Summary
- ESD protected gate structure
- Tiny, space saving package with low profile height
- Low on state resistance for efficient conduction
- Fast switching times with low gate charge
Applications
- Power Management Units
- Battery powered devices
- Load Switches
- Polarity Protection
Procurement Notes
Verify the specific ordering suffix when purchasing. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes AEC-Q101 qualification. Confirm that the required automotive grade matches the intended application environment before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high current handling in a compact footprint. The low RDS(on) minimizes conduction losses, while the fast switching characteristics support high-frequency operation. Ensure thermal management aligns with the specified thermal resistance values for optimal performance.
Part Context
This part belongs to Diotec's lineup of discrete semiconductor components designed for industrial and consumer electronics. It complements other MOSFETs and diodes offered by the manufacturer, providing robust solutions for power management and protection circuits within modern electronic systems.
Replacement Considerations
Check for DI032N03PT variants or other Diotec N-Channel MOSFETs in the same series. Verify pinout compatibility and electrical parameters such as VDSS, ID, and RDS(on) against existing designs before substitution.
FAQ
What is the maximum single pulse avalanche energy?
The single pulse avalanche energy (EAS) is rated at 45 mJ under specified test conditions.
Does the standard DI032N03PTK meet automotive standards?
The standard version is commercial/industrial grade. Automotive qualification requires specific suffixes: -Q for compliant and -AQ for qualified per AEC-Q101.
