DI034N10PT-AQ

$0.17

Description：DI034N10PT-AQ
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:4b472c9c209f Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DI034N10PT-AQ
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：18mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1330 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (3x3)
Package / Case：8-PowerVDFN

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DI034N10PT-AQ

Overview

The DI034N10PT-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN3x3 (DFN3030) package. It features a drain-source voltage of 100 V and a continuous drain current of 34 A at 25°C. The device exhibits a low on-state resistance of less than 16 mΩ at VGS=10V and 15A. It supports a maximum junction temperature of 175°C and offers fast switching times with a total gate charge of 15.5 nC. The component is AEC-Q101 qualified.

Feature Summary

Space-saving QFN3x3 package with low profile height
Low on-state resistance for efficient power handling
Fast switching characteristics with low gate charge
Logic-level drive capability

Applications

Power Management Units
Battery powered devices
Load Switches
Polarity Protection

Procurement Notes

Verify the specific suffix -AQ to confirm AEC-Q101 qualification status before procurement. Ensure the ordering part number matches the required automotive grade specifications. Confirm availability through authorized distributors as supply levels may vary. Validate that the component meets the thermal and electrical requirements of the target application design.

Selection Notes

Select this component for applications requiring high current density in a small footprint. The 100V rating suits general power management tasks. Consider the 175°C junction temperature limit for high-thermal environments. Verify gate drive compatibility with the logic-level threshold. Evaluate PCB copper pad area for optimal thermal dissipation given the RthJA specification.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup designed for commercial and industrial use. The DI034N10PT series utilizes silicon technology in a surface-mount DFN3030 case. It is positioned alongside other high-current variants like the DI035N10PT, offering similar performance metrics within a standardized package family for modular design approaches.