SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DI035P02PT is a P-Channel Power MOSFET manufactured by Diotec Semiconductor in a QFN3x3 (DFN3030) package. It features a drain-source voltage of -20 V and a continuous drain current of -35 A at 25°C. The device exhibits a low on-state resistance of less than 3.9 mΩ, with a maximum power dissipation of 52 W and a junction temperature rating up to 150°C. Single pulse avalanche energy is rated at 20 mJ.
Verify the specific ordering suffix when purchasing. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes AEC-Q101 qualification. Confirm that the component meets RoHS standards and REACH regulations before integration into final assemblies.
Select this component for applications requiring high current density within a compact footprint. The low thermal resistance facilitates effective heat dissipation through the drain pad. Ensure the design accommodates the specified gate-source voltage limits and operates within the defined thermal boundaries.
This part belongs to the DI0XX series from Diotec Semiconductor, designed for commercial and industrial grade environments. It utilizes silicon technology and is supplied in taped and reeled formats suitable for automated surface mount assembly processes.
Check Diotec's official documentation for direct replacements or similar specifications. Verify pinout compatibility and electrical parameters against alternative suppliers if sourcing changes are necessary.