DI038N04PQ2

Overview

The DI038N04PQ2 is a dual N-channel power MOSFET manufactured by Diotec Semiconductor. It features a QFN5x6 package with a drain-source voltage (VDSS) of 45 V and a continuous drain current (ID) of 38 A at TC = 25°C. The device exhibits a maximum on-state resistance (RDS(on)) of 13.5 mΩ at VGS = 10 V and ID = 10 A, or 18 mΩ at VGS = 4.5 V and ID = 8 A. Peak drain current reaches 160 A, while single-pulse avalanche energy is rated at 36 mJ. Power dissipation is 21 W at TC = 25°C, with a junction temperature range of -55°C to +150°C.

Feature Summary

• Dual MOSFET configuration in a low-profile, space-saving package
• Low on-state resistance for efficient power handling
• Fast switching times with low gate charge
• Avalanche rated capability

Applications

• DC/DC Converters
• Power Supplies
• DC Drives
• Synchronous Rectifiers

Procurement Notes

Verify the specific suffix when ordering. The standard version is commercial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes AEC-Q101 qualification. Confirm these designations match project requirements before procurement.

Selection Notes

Select this component for applications requiring high current density in compact footprints. The 45V rating suits low-voltage systems. Evaluate thermal management needs as the 21W dissipation limit depends on case temperature. Ensure gate drive voltages align with the specified threshold characteristics.

Part Context

This part belongs to Diotec's Dual N-Channel Power MOSFET series. It utilizes a QFN5x6 case outline designed for surface mount assembly. The marking code is 6E4N120. It is supplied in taped and reeled packaging with 5000 units per 13-inch reel.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.