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Product Detailed Parameters
- Description：MOSFET, POWERQFN 3X3, -40V, -40A
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：59 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3538 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：22.7W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (3x3)
- Package / Case：8-PowerVDFN
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Overview
The DI040P04PT-AQ is a P-Channel Power MOSFET from Diotec Semiconductor, designed for automotive applications under the AEC-Q101 qualification. It features a PowerQFN 3x3 package with a drain-source voltage (Vds) of -40 V and a continuous drain current (Id) of -40 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 15 mOhms at Vgs = -10 V and Id = -10 A. Key electrical parameters include a gate-source voltage rating of ±20 V, a threshold voltage (Vgs(th)) of 1.7 V typical, and a gate charge (Qg) of 30 nC. Thermal performance includes a power dissipation of 22.7 W at case temperature and an operating temperature range from -55°C to +150°C.
Feature Summary
- Automotive-grade reliability certified to AEC-Q101 standards
- Compact PowerQFN 3x3 surface-mount package for space-constrained designs
- Low on-resistance and fast switching characteristics for efficient power management
Applications
- Automotive load switching and power distribution units
- High-side switch configurations in vehicle electronics
- Battery protection circuits in automotive systems
Procurement Notes
Verify that the specific part number suffix '-AQ' corresponds to the AEC-Q101 qualified version when sourcing. Confirm package type is PowerQFN 3x3 and polarity is P-Channel. Ensure supplier documentation explicitly states automotive qualification status rather than general industrial grade.
Selection Notes
Select this component for applications requiring high current handling in a small footprint with automotive reliability requirements. Compare Rds(on) and thermal resistance against alternatives if higher voltage ratings are needed. Verify gate drive compatibility with the specified Vgs thresholds and charge requirements.
Part Context
This device belongs to Diotec's automotive MOSFET portfolio, specifically engineered for harsh environments. It complements other parts in the DI0XX series by offering optimized trade-offs between conduction losses and switching speeds within the 40V voltage class.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with DI040P04PT for non-automotive variants or consult manufacturer databases for direct equivalents.
