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Product Detailed Parameters
- Description：MOSFET POWERQFN 3X3 N 30V 45A 0.
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.4mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：53 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2300 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：16W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (3x3)
- Package / Case：8-PowerWDFN
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Overview
The DI045N03PT is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a compact QFN3x3 package. It features a drain-source voltage (VDSS) of 30 V and a continuous drain current (ID) of 45 A at 25°C case temperature. The device exhibits a low on-state resistance (RDS(on)) of 3.4 mΩ at VGS = 10 V and 6.8 mΩ at VGS = 4.5 V. With a maximum power dissipation of 16 W and a junction temperature range up to 150°C, it supports fast switching times including a turn-on rise time of 54 ns and a fall time of 8 ns.
Feature Summary
- Compact QFN3x3 package with low profile height for space-saving designs
- Low on-state resistance for efficient power handling
- Fast switching characteristics with low gate charge
- Compliant with RoHS, REACH, and Conflict Minerals regulations
Applications
- Power Management Units
- Battery powered devices
- Load Switches
- Polarity Protection circuits
Procurement Notes
Verify the specific ordering suffix when purchasing. Standard versions are commercial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes AEC-Q101 qualification. Confirm availability through authorized distributors as supply status may vary. Ensure the component matches the required automotive or commercial reliability standards for your specific application environment.
Selection Notes
Select this component for applications requiring high current density in a small footprint. The 30V rating suits low-voltage DC systems. Evaluate thermal management needs based on the 16W dissipation limit and 8 K/W thermal resistance. Consider the gate charge requirements for driver compatibility. Verify if automotive-grade AEC-Q101 variants are necessary for the target market.
Part Context
This part belongs to the DI0XX series of N-Channel Power MOSFETs from Diotec Semiconductor. It utilizes silicon technology and is designed for surface mount assembly. The marking code on the package is 303N040. It is supplied in taped and reeled packaging, typically containing 5000 units per 13-inch reel.
Replacement Considerations
Check Diotec's official Product Change Notices (PCNs) for any direct replacements or end-of-life announcements. No specific substitute part numbers are documented in the provided datasheet.
