DI045N04PT

$0.16

Description：DI045N04PT
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:7bd6eeb77ef9 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DI045N04PT
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：45 V
Current - Continuous Drain (Id) @ 25°C：45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：825 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：41.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (3x3)
Package / Case：8-PowerVDFN

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DI045N04PT

Overview

The DI045N04PT is a single N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a compact QFN3x3 package. It features a drain-source voltage (VDSS) of 45 V and a continuous drain current (ID) of 45 A at 25°C case temperature. The device exhibits a low on-state resistance (RDS(on)) of less than 8.5 mΩ at VGS = 10 V and ID = 10 A. With a maximum junction temperature (Tjmax) of 150°C and power dissipation (PD) of 41.7 W, it supports fast switching times and includes avalanche-rated capabilities with an energy rating of 36 mJ.

Feature Summary

Logic level gate drive for efficient control
Avalanche rated with 100% avalanche testing
Low profile height and tiny space-saving package
Fast switching times combined with low gate charge

Applications

Power Management Units
Battery powered devices
Load Switches
Polarity Protection circuits

Procurement Notes

Verify the specific ordering suffix to confirm compliance status. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes parts currently undergoing AEC-Q101 qualification. Confirm mechanical data such as MSL level 3 and soldering conditions before assembly.

Selection Notes

Select this component for applications requiring high current density in a small footprint. Ensure thermal management aligns with the specified RthJC of less than 3 K/W. Verify that the gate drive voltage meets the logic level requirements for optimal RDS(on) performance. Consider the avalanche energy rating if inductive load switching is present.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup designed for commercial and industrial use. It utilizes silicon technology and is available in a lead-free, RoHS-compliant configuration without exemptions. The marking code '3E4N085' identifies the device on the package surface.