DI045N10PQ

$0.37

Description：MOSFET POWERQFN 5X6 N 100V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:ccdabb4cd799 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET POWERQFN 5X6 N 100V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：13mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：56 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2551 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：50W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (5x6)
Package / Case：8-PowerTDFN

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DI045N10PQ

Overview

The DI045N10PQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN5x6 package. It features a drain-source voltage (VDSS) of 100 V and a continuous drain current (ID) of 45 A at 25°C. The device exhibits a low on-state resistance (RDS(on)) of less than 6.5 mΩ at VGS = 10 V. With a maximum junction temperature (Tjmax) of 175°C and power dissipation (PD) of 50 W, it supports fast switching times and avalanche energy ratings up to 133.4 mJ.

Feature Summary

Low profile, space-saving package design
Low on-state resistance for efficient conduction
Fast switching times with low gate charge
Avalanche rated capability

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools
Synchronous Rectifiers

Procurement Notes

Verify the specific suffix when ordering: standard commercial grade has no suffix, -Q indicates AEC-Q101 compliance, and -AQ denotes AEC-Q101 qualification. Confirm RoHS and REACH compliance status as required by your application standards. Ensure thermal management aligns with the specified RthJC and ambient conditions.

Selection Notes

Select this component for applications requiring high current handling in a small footprint. The 100V rating suits medium-voltage DC systems. Consider the 175°C junction temperature limit for high-temperature environments. Verify that the gate drive voltage meets the threshold requirements for optimal RDS(on) performance.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup, designed for commercial and industrial use. It utilizes advanced trench technology to achieve low on-resistance and fast switching within a thermally efficient QFN5x6 case. The series supports various voltage and current combinations for diverse power electronics needs.

Replacement Considerations

Check pinout compatibility and electrical parameters such as VDSS, ID, and RDS(on). Verify package dimensions match the PCB layout. Suffixes like -Q or -AQ indicate automotive grades; ensure the replacement matches the required reliability standard.