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Product Detailed Parameters
- Description：MOSFET POWERQFN 5X6 N 40V
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.6mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2270 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：35.7W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (5x6)
- Package / Case：8-PowerTDFN
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Overview
The DI048N04PQ-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN5x6 package. It features a drain-source voltage (VDSS) of 40 V and a continuous drain current (ID) of 48 A at 25°C case temperature. The device exhibits a low on-state resistance (RDS(on)) of less than 7.6 mΩ at VGS = 10 V and ID = 12 A. With a maximum junction temperature (Tjmax) of 175°C and power dissipation (PD) of 35.7 W, it supports fast switching times and avalanche energy ratings of 33 mJ.
Feature Summary
- Logic-level gate drive capability for efficient control
- Low on-state resistance to minimize conduction losses
- Fast switching characteristics with low gate charge
- Avalanche rated for robust transient handling
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Synchronous Rectifiers
Procurement Notes
Verify the specific suffix -AQ confirms AEC-Q101 qualification status as defined by the manufacturer. Ensure thermal management designs account for the specified junction-to-case thermal resistance. Confirm that the QFN5x6 footprint matches the target PCB layout requirements before finalizing procurement orders.
Selection Notes
Select this component when a low-profile, space-saving package is required alongside high current handling capabilities. The logic-level gate driver feature makes it suitable for direct interface with standard logic controllers. Consider the 175°C maximum junction temperature for high-temperature operational environments.
Part Context
This part belongs to Diotec's DIxxNxx-PQ series of N-Channel Power MOSFETs designed for commercial and industrial applications. The series utilizes advanced trench technology to achieve low on-state resistance and fast switching speeds within a compact form factor, optimizing efficiency in power conversion circuits.
Replacement Considerations
Check for DI048N04PT-AQ if a PowerVDFN 3x3 package is preferred instead of the QFN5x6 configuration while maintaining similar electrical specifications.
FAQ
What does the suffix -AQ indicate for this MOSFET?
The suffix -AQ indicates that the component is fully qualified according to the AEC-Q101 automotive standard.
Is the DI048N04PQ-AQ rated for avalanche operation?
Yes, the datasheet specifies that the device is avalanche rated with a single pulse avalanche energy (EAS) of 33 mJ under specific test conditions.
