ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DI048N04PQ
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.6mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2270 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：35.7W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (5x6)
- Package / Case：8-PowerTDFN
Download product information
Overview
The DI048N04PQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN5x6 package. It features a drain-source voltage (VDSS) of 40 V and a continuous drain current (ID) of 48 A at 25°C case temperature. The device exhibits a low on-state resistance (RDS(on)) of less than 7.6 mΩ at VGS = 10 V and ID = 12 A. With a maximum junction temperature (Tjmax) of 175°C and power dissipation (PD) of 35.7 W, it supports fast switching times and avalanche energy ratings of 33 mJ.
Feature Summary
- Logic-level gate drive capability for efficient control
- Low on-state resistance to minimize conduction losses
- Fast switching characteristics with low gate charge
- Avalanche rated for robust transient handling
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Synchronous Rectifiers
Procurement Notes
Verify the specific suffix when ordering. The base model DI048N04PQ represents commercial or industrial grade components. Suffixes -Q indicate AEC-Q101 compliance, while -AQ denotes full AEC-Q101 qualification. Ensure the selected variant matches the reliability requirements of your target application environment before finalizing procurement.
Selection Notes
Select this component for applications requiring high current density within a small footprint. The QFN5x6 package offers space-saving benefits compared to traditional through-hole options. Consider the thermal resistance values and available copper pad area on the PCB to ensure the junction temperature remains within the specified 175°C limit during operation.
Part Context
This part belongs to Diotec's N-Channel Power MOSFET lineup designed for modern electronics. It utilizes advanced trench technology to achieve low RDS(on) and fast switching speeds. The product line includes variants with different voltage ratings and packaging options to suit diverse commercial, industrial, and automotive needs.
Replacement Considerations
Check pinout compatibility and electrical parameters such as VDSS, ID, and RDS(on). Verify that any substitute component meets the same thermal resistance and package dimensions to ensure proper mechanical fit and heat dissipation on the existing circuit board layout.
