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Product Detailed Parameters
- Description：DI048N04PT
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.6mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：48.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2268 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：31W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (3x3)
- Package / Case：8-PowerVDFN
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Overview
The DI048N04PT is a dual N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in an 8-QFN (3x3) surface-mount package. It features a drain-source voltage rating of 40 V and a continuous drain current capacity of 48 A at 25°C case temperature. The device exhibits a low on-state resistance of less than 7.6 mΩ at 10 V gate drive and 9 mΩ at 4.5 V gate drive. Key electrical parameters include a maximum power dissipation of 37.5 W, a peak drain current of 200 A, and a total gate charge of 48.5 nC. The component supports a junction temperature range from -55°C to +175°C.
Feature Summary
- Logic level gate drive capability for efficient control with standard logic voltages
- Compact QFN3x3 package design optimized for space-constrained applications
- Low on-state resistance to minimize conduction losses and heat generation
- Fast switching times combined with low gate charge for high-frequency operation
Applications
- Power Management Units
- Battery powered devices
- Load Switches
- Polarity Protection circuits
Procurement Notes
Verify the specific ordering suffix when purchasing. The base model DI048N04PT represents the commercial/industrial grade. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm that the required automotive reliability standards match the ordered variant before finalizing procurement to ensure application suitability.
Selection Notes
Select this component for designs requiring high current density within a minimal footprint. The low thermal resistance allows effective heat dissipation through the drain pad. Ensure the gate driver can supply sufficient voltage to achieve the lowest RDS(on). Verify that the operating environment stays within the specified temperature limits and that the PCB copper area meets the recommended specifications for optimal thermal performance.
Part Context
This part belongs to the DI0XX series of N-Channel Power MOSFETs from Diotec Semiconductor. It utilizes silicon technology and is designed for commercial and industrial grade applications. The device is supplied in tape and reel packaging, suitable for automated surface mount assembly processes.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative components based on matching pinout configurations, voltage ratings, current capabilities, and package dimensions to ensure mechanical and electrical compatibility.
