DI049N06PTK-AQ

$0.42

Description：MOSFET POWERQFN 3X3 N 65V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:39ef62dd8c28 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET POWERQFN 3X3 N 65V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：65 V
Current - Continuous Drain (Id) @ 25°C：49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：31 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1691 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (3x3)
Package / Case：8-PowerVDFN

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DI049N06PTK-AQ

Overview

The DI049N06PTK-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN3x3 package. It features a drain-source voltage (VDSS) of 65 V and a continuous drain current (ID) of 49 A at 25°C. The device exhibits a low on-state resistance (RDS(on)) of less than 6.1 mΩ at VGS = 4.5 V. With a maximum junction temperature (Tjmax) of 150°C and power dissipation (PD) of 25 W, it supports fast switching times and low gate charge. The -AQ suffix indicates the component is undergoing AEC-Q101 qualification.

Feature Summary

ESD protected gate structure for enhanced reliability
Tiny, space-saving QFN3x3 package with low profile height
Low on-state resistance and fast switching characteristics
Compliant with RoHS, REACH, and Conflict Minerals regulations

Applications

Power Management Units
Battery powered devices
Load Switches
Polarity Protection circuits

Procurement Notes

Verify the specific AEC-Q101 status directly with Diotec Semiconductor, as the datasheet specifies the -AQ suffix denotes parts currently in qualification rather than fully certified units. Confirm the exact ordering suffix matches your project requirements, as standard commercial grades may differ. Ensure compatibility with MSL Level 3 soldering conditions and UL 94V-0 case material specifications during assembly planning.

Selection Notes

Select this component for applications requiring high current density in a minimal footprint. The low RDS(on) minimizes conduction losses, while the fast switching speeds suit high-frequency power management tasks. Consider the thermal resistance limits when designing heat dissipation paths, as the small package size requires careful PCB layout to maintain junction temperatures within the specified operating range.

Part Context

This part belongs to Diotec's Power MOSFET lineup, designed for commercial and industrial grade applications. The QFN3x3 packaging allows for efficient board space utilization compared to traditional through-hole or larger surface-mount packages. It serves as a robust switching element in modern electronic systems where size constraints and electrical performance are critical design factors.