DI049N06PTK

$0.36

Description：MOSFET POWERQFN 3X3 N 65V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:bc167044d95d Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET POWERQFN 3X3 N 65V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：65 V
Current - Continuous Drain (Id) @ 25°C：49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：31 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1691 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (3x3)
Package / Case：8-PowerVDFN

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DI049N06PTK

Overview

The DI049N06PTK is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a compact QFN3x3 package. It features a Drain-Source voltage (VDSS) of 65 V and a continuous Drain current (ID) of 49 A at TC = 25°C. The device exhibits a low on-state resistance (RDS(on)) of less than 6.1 mΩ at VGS = 10 V and ID = 20 A. Maximum power dissipation (PD) is rated at 25 W at 25°C, with a maximum junction temperature (Tjmax) of 150°C. Single pulse avalanche energy (EAS) is specified at 4.1 mJ.

Feature Summary

ESD protected gate structure
Tiny, space saving package with low profile height
Low on state resistance for high efficiency
Fast switching times with low gate charge

Applications

Power Management Units
Battery powered devices
Load Switches
Polarity Protection

Procurement Notes

Verify the specific suffix to confirm compliance status. Standard versions are commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliant parts, while -AQ denotes units in AEC-Q101 qualification. Confirm RoHS, REACH, and Conflict Minerals compliance directly with the manufacturer or authorized distributors before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring a compact footprint and high current handling capability within a 65 V system. The QFN3x3 package minimizes board space requirements. Ensure thermal management aligns with the specified RthJA of less than 50 K/W for ambient cooling or utilize the drain pad for case cooling to maximize power dissipation capabilities.

Part Context

This part belongs to Diotec's lineup of N-Channel Power MOSFETs designed for modern electronic solutions. The company specializes in diodes, rectifiers, and protection devices, offering components for industrial, consumer, and automotive electronics. The DI049N06PTK represents their focus on combining performance with small form factors like the PowerQFN series.