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The DI050N06PQ2-AQ is a dual N-channel power MOSFET from Diotec Semiconductor, housed in a QFN5x6-2 package. It features a drain-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 50 A at 25°C case temperature. The device exhibits a low on-state resistance (RDS(on)) of less than 8.5 mΩ at VGS = 10 V and ID = 20 A. Power dissipation reaches 40.5 W at 25°C, with a maximum junction temperature (Tjmax) of 175°C. The component supports logic-level gate drive, fast switching times, and avalanche-rated operation.
Verify the specific ordering suffix when purchasing. The -AQ suffix indicates the component is currently undergoing AEC-Q101 qualification processes. Confirm final automotive compliance status directly with the manufacturer or authorized distributors before integrating into qualified automotive designs.
Select this component for applications requiring high current handling in a compact footprint. Ensure thermal management strategies account for the specified thermal resistance values. Verify that the operating conditions remain within the safe operating area (SOA) limits defined in the datasheet to prevent device failure.
This part belongs to Diotec's dual MOSFET portfolio, designed for commercial and industrial grade environments. It utilizes a lead-free, halogen-free construction compliant with RoHS directives. The package is tape and reeled for automated assembly, supporting standard SMD/SMT manufacturing processes.
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative dual N-channel MOSFETs based on matching VDSS, ID, RDS(on), and package dimensions.