SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DI060N06PQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN5x6 package. It supports a drain-source voltage of 60 V and delivers a continuous drain current of 60 A at 25°C. The device features a low on-state resistance of less than 7 mΩ and a maximum power dissipation of 70 W. It operates within a junction temperature range of -55°C to +150°C and includes avalanche rating capabilities with a single pulse energy of 320 mJ.
Verify the specific suffix when ordering. The standard DI060N06PQ is commercial grade. The -Q suffix indicates AEC-Q101 compliance, while the -AQ suffix denotes parts currently undergoing AEC-Q101 qualification. Confirm these distinctions with the manufacturer or distributor before finalizing procurement to ensure the component meets your required reliability standards.
Select this component for applications requiring high current handling in a small footprint. The 60V rating and 60A continuous current capability suit various power management tasks. Consider the thermal resistance values for heat sink requirements. Ensure the logic-level gate drive characteristics align with your control circuitry specifications for optimal switching efficiency.
This part belongs to Diotec's N-Channel Power MOSFET lineup, designed for commercial and industrial use. It utilizes advanced trench technology to achieve low on-resistance and fast switching speeds. The QFN5x6 package provides excellent thermal performance relative to its size, making it suitable for dense PCB layouts where space is limited but power handling is critical.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters against potential alternatives before substitution.