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Product Detailed Parameters
- Description：DI060N10D1
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：56 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2551 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：54.3W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DI060N10D1 is an N-Channel Power MOSFET in a TO-252AA (D-PACK) package. It features a drain-source voltage of 100 V and a continuous drain current of 60 A at 25°C case temperature, dropping to 37 A at 100°C. The on-state resistance is typically 6.5 mΩ at VGS=10V and ID=15A, with a maximum of 8.5 mΩ at VGS=4.5V and ID=10A. Peak drain current reaches 300 A. Total gate charge is 56 nC. Avalanche energy rating is 132 mJ. Thermal resistance junction-to-case is 2.3 K/W. Operating temperature range spans -55°C to +150°C.
Feature Summary
- Logic level gate drive capability for efficient control
- Low on-state resistance for reduced conduction losses
- Fast switching times with low gate charge
- Rated for single pulse avalanche energy
Applications
- Power Factor Correction (PFC)
- Uninterruptible Power Supplies (UPS)
- Battery Charger circuits
Procurement Notes
Verify the specific suffix when ordering. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm RoHS exemption details if required by your manufacturing process. Ensure thermal management meets the specified junction temperature limits during operation.
Selection Notes
Select this component for applications requiring high current handling in a compact D-PACK footprint. The logic level gate drive simplifies driver circuit design. Verify that the peak drain current and avalanche energy ratings exceed the transient requirements of the target circuit. Consider the thermal resistance when designing heat dissipation strategies for continuous operation.
Part Context
This device belongs to Diotec Semiconductor's N-Channel Power MOSFET lineup. It utilizes silicon technology optimized for power switching applications. The TO-252AA package provides a balance between current capacity and board space efficiency. It is designed for general-purpose power electronics where reliability and switching speed are critical factors.
Replacement Considerations
Check pinout compatibility and electrical parameters such as VDSS, ID, and RDS(on). Verify package dimensions match the existing PCB footprint. Ensure thermal characteristics align with the current heatsink or cooling solution.
