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Product Detailed Parameters
- Description：MOSFET DPAK P -40V -64A
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7.6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：105 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7475 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：48.3W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DI064P04D1 is a P-Channel Power MOSFET in a TO-252AA (D-PACK) package. It features a drain-source voltage of -40 V and a continuous drain current of -64 A at 25°C case temperature. The on-state resistance is less than 7.6 mΩ, with a maximum power dissipation of 48.3 W. Key dynamic parameters include a total gate charge of 105 nC and an avalanche energy rating of 221 mJ. The device supports a junction temperature up to 150°C and complies with RoHS standards.
Feature Summary
- Advanced trench technology for low on-state resistance
- Fast switching times with low gate charge
- Avalanche rated capability
- Compliant with RoHS, REACH, and Conflict Minerals regulations
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Synchronous Rectifiers
Procurement Notes
Verify the specific ordering suffix when purchasing. The base part number refers to the commercial/industrial grade standard version. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm the required automotive or standard grade matches your design specifications before finalizing orders to ensure correct component selection.
Selection Notes
Select this component for applications requiring high current handling in a compact D-PACK footprint. The low RDS(on) minimizes conduction losses, while the avalanche rating provides robustness against transient events. Ensure thermal management accounts for the specified thermal resistance values. Verify that the gate drive voltage aligns with the threshold characteristics for optimal switching performance.
Part Context
This P-Channel MOSFET belongs to Diotec Semiconductor's power discrete component lineup. It utilizes advanced trench technology to achieve high efficiency in power conversion circuits. The device is designed for commercial and industrial environments, with optional automotive-grade variants available through specific suffixes. It serves as a key switching element in modern power electronics designs.
Replacement Considerations
No public confirmed substitute part numbers are documented in the source material.
FAQ
What is the maximum single pulse avalanche energy?
The DI064P04D1 has a single pulse avalanche energy rating of 221 mJ.
Does the DI064P04D1 support automotive applications?
The base DI064P04D1 is for commercial/industrial use. Automotive applications require parts with the -Q (compliant) or -AQ (qualified) suffixes indicating AEC-Q101 status.
