DI067P06PQ

$0.61

Description：MOSFET POWERQFN 5X6 P -60V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:2591037c8769 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET POWERQFN 5X6 P -60V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：13.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：62.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5505 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：110W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (5x6)
Package / Case：8-PowerTDFN

Download product information

DI067P06PQ

Overview

The DI067P06PQ is a P-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for high-current applications. It features a QFN5x6 (TDSON-8 / DFN5060) package and operates with a drain-source voltage of -60 V. The device supports a continuous drain current of -67 A at 25°C case temperature, reducing to -42 A at 100°C. Its maximum on-state resistance is 13.5 mΩ at VGS = -4.5 V and ID = -20 A. Key electrical parameters include a total gate charge of 62.1 nC, a single pulse avalanche energy rating of 560 mJ, and a power dissipation capacity of 110 W at 25°C.

Feature Summary

Logic level gate drive capability for efficient control
Avalanche rated for robust transient handling
Low profile, space-saving QFN5x6 package design

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools
Synchronous Rectifiers

Procurement Notes

Verify the specific suffix when ordering. The base model DI067P06PQ represents the standard commercial or industrial grade component. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes qualification status. Confirm that the required automotive reliability standards match the selected suffix variant before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high current density in compact footprints. The low on-state resistance minimizes conduction losses, while the logic-level gate drive simplifies driver circuit requirements. Ensure thermal management strategies account for the 110 W dissipation limit at 25°C case temperature and the 1.14 K/W thermal resistance junction-to-case value.

Part Context

This part belongs to Diotec's P-Channel Power MOSFET lineup, utilizing the QFN5x6 surface-mount technology. It is engineered for commercial and industrial environments where space constraints and high efficiency are critical. The device integrates fast switching characteristics suitable for modern power electronics architectures.