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Product Detailed Parameters
- Description：MOSFET POWERQFN 5X6 N 30V
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：79 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3650 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (5x6)
- Package / Case：8-PowerTDFN
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Overview
The DI068N03PQ-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a QFN5x6 package. It features a drain-source voltage of 30 V and a continuous drain current of 68 A at 25°C. The device exhibits a low on-state resistance of approximately 3 mΩ at VGS=10V. It supports a power dissipation of 25 W and operates within a junction temperature range of -55°C to +150°C. The component includes avalanche energy ratings of 80 mJ and complies with RoHS standards.
Feature Summary
- Low profile, space-saving QFN5x6 package design
- Avalanche rated for robust operation under transient conditions
- Fast switching times combined with low gate charge
- Compliant with RoHS, REACH, and Conflict Minerals regulations
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
- Synchronous Rectifiers
Procurement Notes
Verify the specific suffix designation when ordering. The '-AQ' suffix indicates the component is currently undergoing AEC-Q101 qualification rather than being fully compliant. Confirm final automotive grade status directly with the manufacturer before integrating into qualified automotive designs. Ensure sourcing channels provide official datasheets matching this exact part number to avoid specification mismatches.
Selection Notes
Select this component for applications requiring high current handling in compact footprints. The 30 V rating suits low-voltage DC systems. Evaluate thermal management requirements based on the 25 W dissipation limit at case temperatures. Consider the 80 mJ avalanche capability for circuits prone to inductive load switching. Verify that the QFN5x6 footprint aligns with existing PCB layout constraints.
Part Context
This part belongs to Diotec's N-Channel Power MOSFET lineup designed for commercial and industrial use. It utilizes silicon technology optimized for low on-state resistance. The QFN5x6 package provides efficient heat dissipation through a dedicated thermal pad. It serves as a standard-grade alternative to higher-cost automotive-specific variants while maintaining robust electrical performance for general power electronics.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching key parameters such as 30 V VDS, 68 A ID, and QFN5x6 packaging. Consult the manufacturer for updated compatibility lists.
