DI068N03PQ

$0.25

Description：MOSFET POWERQFN 5X6 N 30V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:7c9f6d10e54e Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET POWERQFN 5X6 N 30V
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：79 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3650 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (5x6)
Package / Case：8-PowerTDFN

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DI068N03PQ

Overview

The DI068N03PQ is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for high-efficiency power switching applications. It features a low on-state resistance of approximately 3 mΩ at VGS = 10 V and ID = 20 A, ensuring minimal conduction losses. The device supports a continuous drain current of 68 A at TC = 25°C and withstands a peak drain current of 210 A. With a drain-source breakdown voltage (VDSS) of 30 V and a maximum junction temperature (Tjmax) of 150°C, it provides robust performance in demanding environments. Packaged in a QFN5x6 / ~TDSON-8 footprint, the component offers a compact solution with a thermal resistance from junction to case of 5 K/W.

Feature Summary

Low profile, space-saving package design
Avalanche rated capability
Fast switching times with low gate charge
Compliant to RoHS, REACH, and Conflict Minerals standards

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools
Synchronous Rectifiers

Procurement Notes

Verify the specific ordering suffix when procuring. The standard version is commercial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes AEC-Q101 qualification status. Confirm these details against the manufacturer's datasheet or official product documentation to ensure the correct reliability grade is selected for the intended application environment.

Selection Notes

Select this component for designs requiring a 30 V N-Channel MOSFET with high current handling capabilities up to 68 A. The low RDS(on) makes it suitable for synchronous rectification and efficient power conversion. Ensure adequate thermal management is provided, as the device dissipates 25 W at 25°C case temperature. Verify that the operating conditions remain within the specified safe operating area (SOA) and avalanche energy limits of 80 mJ.

Part Context

This part belongs to Diotec Semiconductor's discrete semiconductor portfolio, which includes diodes, transistors, and MOSFETs. The company specializes in producing standard and customized components for industrial, energy, mobility, and consumer electronics markets. The DI068N03PQ represents their offering in the power MOSFET category, utilizing advanced packaging technologies to meet modern electronic size and efficiency requirements.