SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DI068P04D1-AQ is a P-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for commercial and industrial applications. It features an advanced trench technology with a drain-source voltage (VDSS) of -40 V and a continuous drain current (-ID) of -68 A at 25°C case temperature. The device exhibits a low on-state resistance (RDS(on)) of less than 7.3 mΩ at VGS = -4.5 V and ID = -10 A. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-252AA (D-PACK) package.
Verify the specific suffix requirements during procurement. The -AQ suffix indicates AEC-Q101 qualification, while -Q denotes compliance. Confirm that the component meets the intended application's reliability standards, as these parts are classified as commercial or industrial grade. Ensure proper handling procedures are followed due to the MSL 3 classification.
Select this component when a P-Channel MOSFET with high current capacity and low RDS(on) is required for power management circuits. Consider the thermal resistance characteristics and the need for adequate heat sinking given the 65 W power dissipation rating. Evaluate the avalanche energy rating if the application involves inductive load switching.
This part belongs to Diotec Semiconductor's lineup of P-Channel Power MOSFETs utilizing advanced trench technology. It is engineered for efficiency in power conversion systems. The -AQ variant specifically targets automotive-grade qualification standards, offering enhanced reliability compared to standard commercial versions.
Check for direct replacements with identical pinouts and electrical specifications. Verify that any substitute maintains the same VDSS, -ID, and RDS(on) ratings. Ensure the replacement package matches the TO-252AA form factor for PCB compatibility.