DI068P04D1

$0.54

Description：MOSFET DPAK P -40V -68A
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:864d5ba8f531 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET DPAK P -40V -68A
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：125 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7560 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：65W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DI068P04D1

Overview

The DI068P04D1 is a P-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for high-current applications. It features an advanced trench technology to achieve low on-state resistance and fast switching times. The device is housed in a TO-252AA (D-PACK) package with a maximum junction temperature of 175°C. Key electrical ratings include a drain-source voltage of -40 V, a continuous drain current of -68 A at 25°C, and a power dissipation of 65 W. It supports single-pulse avalanche energy up to 101 mJ.

Feature Summary

Advanced Trench Technology
Low On-State Resistance
Fast Switching Times
Avalanche Rated

Applications

DC/DC Converters
Power Supplies
DC Drives
Synchronous Rectifiers

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard commercial grade does not carry automotive qualifications. Suffixes -Q indicate AEC-Q101 compliance, while -AQ indicates AEC-Q101 qualification. Confirm that the required reliability grade matches your application's environmental standards before finalizing procurement.

Selection Notes

Select this component for designs requiring high continuous current handling within a compact D-PACK footprint. Ensure thermal management strategies account for the specified thermal resistance values. Verify gate drive voltages against the threshold characteristics to ensure full enhancement. Consider the avalanche rating if the circuit topology involves inductive load switching.

Part Context

This part belongs to Diotec Semiconductor's lineup of P-Channel Power MOSFETs. It utilizes advanced trench technology to optimize performance metrics such as on-state resistance and switching speed. The device is intended for commercial and industrial grade applications, providing a robust solution for power conversion and motor control circuits.