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Product Detailed Parameters
- Description：MOSFET DPAK N 65V 74A
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：65 V
- Current - Continuous Drain (Id) @ 25°C：74A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：31 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1691 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：56.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DI074N06D1K is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, designed for commercial and industrial applications. It features a drain-source voltage (VDSS) of 65 V and a continuous drain current (ID) of 74 A at 25°C case temperature. The device utilizes advanced trench technology to achieve a low on-state resistance (RDS(on)) of less than 5.8 mΩ at VGS = 10 V. Key electrical parameters include a maximum gate-source voltage of ±20 V, a power dissipation of 56.8 W at 25°C, and a junction temperature range from -55°C to +150°C. The component is housed in a TO-252AA (D-PACK) package.
Feature Summary
- Advanced Trench Technology for optimized performance
- Logic Level Gate Drive capability
- Low on-state resistance and fast switching times
- Avalanche rated with low gate charge
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Synchronous Rectifiers
Procurement Notes
Verify the specific suffix when ordering. The base model DI074N06D1K represents the standard commercial grade. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes qualification status. Confirm these designations against project requirements before procurement to ensure correct automotive or industrial grading.
Selection Notes
Select this component for high-current switching applications requiring low conduction losses. Ensure adequate thermal management, as power dissipation ratings are based on a 25°C case temperature. Verify that the gate drive voltage meets the logic level requirements for optimal RDS(on) performance. Consider the avalanche energy rating if inductive load switching is present.
Part Context
This part belongs to Diotec's N-Channel Power MOSFET lineup, utilizing TO-252AA packaging. It is distinct from automotive-specific variants which carry different suffixes. The device is intended for general-purpose power switching where standard reliability levels are sufficient.
Replacement Considerations
No public substitute part numbers are documented in the provided datasheet.
FAQ
What is the maximum single pulse avalanche energy?
The single pulse avalanche energy (EAS) is rated at 5 mJ under conditions of IAS = 10 A, VG = 10 V, L = 0.1 mH, and RG = 25 Ω.
Does the DI074N06D1K meet automotive standards?
The base DI074N06D1K is a commercial/industrial grade component. Automotive qualification is available only in versions with specific suffixes, such as -Q (compliant) or -AQ (qualified).
