DI075N08PQ

$0.64

Description：DI075N08PQ
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:6b48c579c5e9 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DI075N08PQ
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：7V, 10V
Rds On (Max) @ Id, Vgs：4mOhm @ 55A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：89 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5500 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：45W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (5x6)
Package / Case：8-PowerTDFN

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DI075N08PQ

Overview

The DI075N08PQ is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a QFN5x6 (TDSON-8 / DFN5060) package. It features a Drain-Source voltage (VDSS) of 80 V and a continuous Drain current (ID) of 75 A at TC = 25°C. The device exhibits a maximum on-state resistance (RDS(on)) of less than 4 mΩ at VGS = 10 V and ID = 55 A. Key electrical parameters include a Gate-Source threshold voltage ranging from 2 V to 4 V, a total gate charge (Qg) of 89 nC, and a single pulse avalanche energy rating of 91.2 mJ. Thermal performance includes a junction-to-case thermal resistance (RthJC) of less than 2.78 K/W, with a maximum operating junction temperature of 150°C.

Feature Summary

Avalanche rated and subjected to 100% avalanche testing for enhanced ruggedness.
Low profile, space-saving package design suitable for compact applications.
Fast switching times combined with low gate charge for efficient operation.
Standard level gate drive capability simplifying control circuit requirements.

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools
Synchronous Rectifiers

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard version is designated as commercial or industrial grade. Suffix -Q indicates compliance with the AEC-Q101 automotive standard, while suffix -AQ denotes units currently undergoing AEC-Q101 qualification. Confirm that the required reliability grade matches the application environment before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high current handling within an 80 V system. The low RDS(on) minimizes conduction losses, while the avalanche rating supports inductive load switching. Ensure adequate thermal management is provided, as power dissipation drops significantly above 25°C case temperature. Verify gate drive voltage compatibility with the specified threshold range.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET portfolio, utilizing silicon technology. It is designed for general-purpose switching applications in commercial and industrial electronics. The device is compliant with RoHS directives (excluding exemption 7a-I), REACH regulations, and conflict minerals standards. It is supplied in taped and reeled packaging for automated assembly processes.