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Product Detailed Parameters
- Description：DI080N10D1
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：75 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3742 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：56.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DI080N10D1 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TO-252AA (D-PACK) package. It features a drain-source voltage rating of 100 V and a continuous drain current capacity of 80 A at 25°C case temperature. The device exhibits a low on-state resistance of less than 4.2 mΩ at VGS = 10 V and ID = 30 A. With a maximum power dissipation of 56.8 W and a junction temperature range up to 150°C, it supports logic level gate drive and avalanche-rated operation.
Feature Summary
- Logic level gate drive capability for efficient control
- Low on-state resistance for reduced conduction losses
- Fast switching times with low gate charge
- Avalanche rated for robust energy handling
Applications
- Power Factor Correction (PFC)
- Uninterruptible Power Supplies (UPS)
- Battery Charger systems
Procurement Notes
Verify the specific suffix when ordering. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm RoHS and REACH adherence requirements with the supplier before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring high current handling and low thermal resistance in a compact surface-mount package. Ensure adequate heatsinking is provided to maintain the case temperature within specified limits for optimal performance. Verify that the gate drive voltage aligns with the logic level threshold characteristics for full enhancement.
Part Context
This part belongs to the Diotec N-Channel Power MOSFET series designed for general-purpose power switching. It utilizes silicon technology and is compliant with RoHS directives. The device is intended for standard commercial and industrial applications where reliability and efficiency are critical design parameters.
Replacement Considerations
Consult official Diotec documentation for verified substitute part numbers. Cross-referencing requires matching electrical ratings such as VDSS, ID, and RDS(on), as well as physical footprint compatibility.
