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The DI087N03D1-AQ is an N-Channel Power MOSFET in a TO-252AA (D-PACK) package. It features a drain-source voltage of 30 V and a continuous drain current of 87 A at 25°C case temperature. The device has a maximum on-state resistance of 3 mΩ at VGS=10V and ID=20A, with a peak pulsed drain current of 420 A. It supports a single pulse avalanche energy of 120 mJ and operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix against official Diotec documentation to confirm qualification status. The '-AQ' suffix indicates the component is undergoing AEC-Q101 qualification rather than being fully compliant. Ensure the ordering code matches the exact electrical requirements and package type specified in the datasheet before finalizing procurement.
Select this component for applications requiring high current capacity up to 87 A and low conduction losses below 3 mΩ. Consider the thermal resistance of less than 50 K/W to ambient for heat dissipation planning. Verify that the 30 V breakdown voltage aligns with the system's operational limits and transient conditions.
This part belongs to Diotec Semiconductor's N-Channel Power MOSFET lineup, designed for commercial and industrial grade applications. The manufacturer specializes in discrete semiconductor components including diodes, transistors, and regulators. The product line targets modern electronics requiring reliable standard performance solutions.
No public confirmed substitute part numbers are available in the provided source material.