DI087N03D1-AQ

DI087N03D1-AQ

$0.47
  • Description:MOSFET DPAK N 30V 87A
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk

SKU:5c75eb70e707 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET DPAK N 30V 87A
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:87A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:3mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:39 nC @ 15 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2486 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):41.67W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252 (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

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DI087N03D1-AQ

Overview

The DI087N03D1-AQ is an N-Channel Power MOSFET in a TO-252AA (D-PACK) package. It features a drain-source voltage of 30 V and a continuous drain current of 87 A at 25°C case temperature. The device has a maximum on-state resistance of 3 mΩ at VGS=10V and ID=20A, with a peak pulsed drain current of 420 A. It supports a single pulse avalanche energy of 120 mJ and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

  • Low on-state resistance for efficient power handling
  • Fast switching times with low gate charge
  • Rated for avalanche energy operation
  • Compliant with RoHS directives

Applications

  • Power Factor Correction (PFC)
  • Uninterruptible Power Supplies (UPS)
  • Battery Chargers

Procurement Notes

Verify the specific suffix against official Diotec documentation to confirm qualification status. The '-AQ' suffix indicates the component is undergoing AEC-Q101 qualification rather than being fully compliant. Ensure the ordering code matches the exact electrical requirements and package type specified in the datasheet before finalizing procurement.

Selection Notes

Select this component for applications requiring high current capacity up to 87 A and low conduction losses below 3 mΩ. Consider the thermal resistance of less than 50 K/W to ambient for heat dissipation planning. Verify that the 30 V breakdown voltage aligns with the system's operational limits and transient conditions.

Part Context

This part belongs to Diotec Semiconductor's N-Channel Power MOSFET lineup, designed for commercial and industrial grade applications. The manufacturer specializes in discrete semiconductor components including diodes, transistors, and regulators. The product line targets modern electronics requiring reliable standard performance solutions.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided source material.

DI087N03D1-AQDI087N03D1-AQ
$0.47
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