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The DI100N04PT-AQ is an N-Channel Power MOSFET in a QFN3x3 package. It features a drain-source voltage of 40 V and continuous drain current of 100 A at 25°C case temperature. The on-state resistance is typically 2 mΩ with a maximum of 3 mΩ. Maximum junction temperature is 175°C, and power dissipation is 46.1 W at 25°C.
Verify the specific suffix -AQ to confirm AEC-Q101 qualification status. Ensure thermal management meets the specified RthJC requirements. Confirm component authenticity through authorized channels. Check datasheet version dates for latest electrical characteristics.
Select this component for high-current applications requiring compact footprints. Evaluate thermal resistance against system heat sinking capabilities. Verify gate drive voltage compatibility with the logic-level threshold specifications.
This part belongs to Diotec's N-Channel Power MOSFET series designed for commercial and industrial use. It utilizes advanced trench technology to achieve low on-resistance within a small surface-mount package suitable for automated assembly processes.
Check pinout compatibility and thermal resistance values when substituting. Verify that alternative components meet the 40V drain-source voltage requirement and support the necessary continuous current ratings.