DI100N10PQ-AQ

$3.22

Description：MOSFET PWRQFN 5X6 100V 0.0045OHM
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9d0f208922b9 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET PWRQFN 5X6 100V 0.0045OHM
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：64 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3400 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：50W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (5x6)
Package / Case：8-PowerTDFN

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DI100N10PQ-AQ

Overview

The DI100N10PQ-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN5x6 (TDSON-8) package. It features a drain-source voltage of 100 V and a continuous drain current of 80 A at 25°C case temperature. The device exhibits a low on-state resistance of less than 4.5 mΩ at VGS = 10 V and ID = 50 A. With a maximum junction temperature of 175°C and avalanche energy rating of 144 mJ, it supports robust switching performance. The -AQ suffix indicates the component is fully AEC-Q101 qualified for automotive applications.

Feature Summary

Logic-level gate drive capability
Low on-state resistance
Fast switching times
Avalanche rated

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools
Synchronous Rectifiers

Procurement Notes

Verify that the ordering suffix matches the required qualification level. The -AQ designation confirms full AEC-Q101 qualification, whereas other suffixes may indicate different compliance grades. Confirm the specific package variant and thermal characteristics align with your design requirements before finalizing procurement.

Selection Notes

Select this component for high-current applications requiring low conduction losses and fast switching speeds. Ensure the thermal management strategy accommodates the specified power dissipation limits. Verify that the logic-level gate drive threshold meets the control circuit specifications for optimal efficiency.

Part Context

This part belongs to the DIxxNxx-PQ series of N-Channel Power MOSFETs designed for commercial, industrial, and automotive use. The series utilizes advanced trench technology to achieve low on-state resistance and fast switching times within a space-saving package format suitable for dense PCB layouts.