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The DI105N04PQ-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN5x6 package. It features a drain-source voltage (VDSS) of 40 V and continuous drain currents ranging from 80 A at TC = 100°C to 130 A at TC = 25°C. The device exhibits a low on-state resistance (RDS(on)) of less than 2.6 mΩ at VGS = 10 V and ID = 50 A. With a maximum junction temperature (Tjmax) of 175°C and power dissipation of 83 W, it supports fast switching times and avalanche energy ratings up to 264 mJ.
Verify the specific suffix against official documentation to confirm qualification status. The -AQ suffix indicates AEC-Q101 qualified parts, while -Q denotes compliance. Ensure the ordering code matches the required automotive or commercial grade specifications before procurement.
Select this component for high-current applications requiring low thermal resistance and efficient switching. The 175°C junction temperature rating allows for higher operating temperatures compared to standard 150°C devices. Consider the 40V rating and low RDS(on) for minimizing conduction losses in synchronous rectification or motor drive circuits.
This part belongs to the DIxxNxx-PQ series of N-Channel Power MOSFETs by Diotec Semiconductor. These components are designed for commercial and industrial use, offering a balance of high current handling and low on-resistance within a small footprint suitable for modern electronic designs.
DI105N04PQ
The maximum junction temperature (Tjmax) is 175°C.
Yes, the device is avalanche rated with a single pulse avalanche energy (EAS) of 264 mJ under specified test conditions.