DI105N04PQ-AQ

DI105N04PQ-AQ

$1.27
  • Description:MOSFET PWRQFN 5X6 40V 0.0026OHM
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:f26756e97338 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET PWRQFN 5X6 40V 0.0026OHM
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:105A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:2.6mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3033 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):83W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-QFN (5x6)
  • Package / Case:8-PowerTDFN

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DI105N04PQ-AQ

Overview

The DI105N04PQ-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN5x6 package. It features a drain-source voltage (VDSS) of 40 V and continuous drain currents ranging from 80 A at TC = 100°C to 130 A at TC = 25°C. The device exhibits a low on-state resistance (RDS(on)) of less than 2.6 mΩ at VGS = 10 V and ID = 50 A. With a maximum junction temperature (Tjmax) of 175°C and power dissipation of 83 W, it supports fast switching times and avalanche energy ratings up to 264 mJ.

Feature Summary

  • Low profile, space-saving package design
  • Avalanche rated for robust operation
  • Fast switching times with low gate charge
  • Compliant with RoHS, REACH, and Conflict Minerals standards

Applications

  • DC/DC Converters
  • Power Supplies
  • DC Drives
  • Power Tools
  • Synchronous Rectifiers

Procurement Notes

Verify the specific suffix against official documentation to confirm qualification status. The -AQ suffix indicates AEC-Q101 qualified parts, while -Q denotes compliance. Ensure the ordering code matches the required automotive or commercial grade specifications before procurement.

Selection Notes

Select this component for high-current applications requiring low thermal resistance and efficient switching. The 175°C junction temperature rating allows for higher operating temperatures compared to standard 150°C devices. Consider the 40V rating and low RDS(on) for minimizing conduction losses in synchronous rectification or motor drive circuits.

Part Context

This part belongs to the DIxxNxx-PQ series of N-Channel Power MOSFETs by Diotec Semiconductor. These components are designed for commercial and industrial use, offering a balance of high current handling and low on-resistance within a small footprint suitable for modern electronic designs.

Replacement Considerations

DI105N04PQ

FAQ

What is the maximum junction temperature for the DI105N04PQ-AQ?

The maximum junction temperature (Tjmax) is 175°C.

Does the DI105N04PQ-AQ support avalanche operation?

Yes, the device is avalanche rated with a single pulse avalanche energy (EAS) of 264 mJ under specified test conditions.

DI105N04PQ-AQDI105N04PQ-AQ
$1.27
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