DI110N06D2-AQ

$0.85

Description：DI110N06D2-AQ
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:b829e795942a Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DI110N06D2-AQ
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：75 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4597 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：62.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-263AB (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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DI110N06D2-AQ

Overview

The DI110N06D2-AQ is an N-Channel Power MOSFET in a TO-263AB (D2PAK) package. It features a drain-source voltage of 60 V and a continuous drain current of 110 A at 25°C, dropping to 70 A at 100°C. The on-state resistance is typically 2.8 mΩ with a maximum of 3.2 mΩ. Key dynamic parameters include a total gate charge of 75 nC, turn-on delay of 39 ns, and rise time of 69 ns. It supports a single pulse avalanche energy of 100.3 mJ and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Advanced Trench Technology for low on-state resistance
Avalanche rated capability for robust transient handling
Standard Level Gate Drive optimized for easy integration
Fast switching times with low gate charge

Applications

DC/DC Converters
Power Supplies
DC Drives
Synchronous Rectifiers

Procurement Notes

Verify the specific suffix against official Diotec documentation to confirm qualification status. The -AQ suffix indicates the component is currently undergoing AEC-Q101 qualification rather than being fully compliant. Ensure that design requirements align with commercial or industrial grade specifications if automotive certification is not yet finalized. Confirm RoHS compliance details directly from the manufacturer's latest datasheet release.

Selection Notes

Select this component for high-current applications requiring low conduction losses and fast switching speeds. The 60V rating suits standard bus voltages, while the D2PAK package facilitates effective thermal management via the heat flange. Evaluate the 100.3 mJ avalanche energy limit to ensure protection against inductive load switching events. Consider the 75 nC gate charge when designing driver circuits for optimal efficiency.

Part Context

This device belongs to the DI110N series of N-Channel Power MOSFETs manufactured by Diotec Semiconductor. The series utilizes advanced trench technology to achieve low on-state resistance and fast switching characteristics. These components are designed for commercial and industrial applications, offering a balance of performance and reliability in power conversion environments.