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Product Detailed Parameters
- Description：DI115N06PQ
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：78.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4128 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：78.9W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (5x6)
- Package / Case：8-PowerTDFN
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Overview
The DI115N06PQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a QFN5x6 or TDSON-8 package. It features a drain-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 115 A at TC = 25°C. The device exhibits a low on-state resistance (RDS(on)) of less than 2.5 mΩ at VGS = 10 V. With a maximum junction temperature (Tjmax) of 175°C and power dissipation (PD) of 78.9 W, it supports fast switching times and avalanche energy ratings up to 185.4 mJ.
Feature Summary
- Logic-level gate drive capability for efficient control
- Low profile and space-saving package design
- Avalanche rated for robust operation under transient conditions
- Compliant with RoHS, REACH, and Conflict Minerals regulations
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
- Synchronous Rectifiers
Procurement Notes
Verify the specific suffix when ordering. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes parts currently undergoing AEC-Q101 qualification. Confirm these distinctions align with project reliability requirements before procurement.
Selection Notes
Select this component for high-current applications requiring low conduction losses and compact footprints. Ensure thermal management strategies account for the specified thermal resistance values. Verify that the logic-level gate drive meets the controller's output voltage specifications for optimal RDS(on) performance.
Part Context
This part belongs to Diotec's N-Channel Power MOSFET series designed for modern electronics. It utilizes advanced trench technology to achieve low on-state resistance and fast switching speeds within a compact 5mm x 6mm footprint, suitable for demanding commercial and industrial environments.
Replacement Considerations
Check pinout compatibility and electrical parameters such as VDSS, ID, and RDS(on). Verify package dimensions match the existing PCB layout. Consider thermal characteristics and switching speeds if replacing with other manufacturers' equivalents.
