DI120N04PQ-AQ

$0.60

Description：DI120N04PQ-AQ
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:b2678d386ca1 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：DI120N04PQ-AQ
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：50W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-QFN (5x6)
Package / Case：8-PowerTDFN

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DI120N04PQ-AQ

Overview

The DI120N04PQ-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, packaged in a compact QFN5x6 (TDSON-8/DFN5060) footprint. It features a drain-source voltage of 40 V and a continuous drain current of 120 A at 25°C case temperature. The device exhibits a low on-state resistance of less than 1.3 mΩ and supports a maximum junction temperature of 175°C. With a power dissipation rating of 50 W and avalanche energy capability, it is designed for high-efficiency switching applications.

Feature Summary

Low profile, space-saving package design
Avalanche rated for robust operation
Fast switching times with low gate charge
Compliant with RoHS, REACH, and Conflict Minerals regulations

Applications

DC/DC Converters
Power Supplies
DC Drives
Power Tools
Synchronous Rectifiers

Procurement Notes

Verify the specific suffix designation when ordering to confirm qualification status. The -AQ suffix indicates the component is fully qualified under AEC-Q101 automotive standards, whereas other suffixes may denote compliance only. Ensure that the procurement documentation explicitly references the correct part number variant to match the required reliability grade for the intended application environment.

Selection Notes

Select this component for designs requiring high current handling within a small surface-mount footprint. The low thermal resistance facilitates efficient heat dissipation without external heatsinks in many scenarios. Consider the 175°C maximum junction temperature for high-temperature environments. Verify that the logic-level gate drive requirements align with the control circuitry capabilities for optimal switching performance.

Part Context

This component belongs to Diotec's DIxxNxx-PQ series of N-Channel Power MOSFETs. These devices are engineered for commercial, industrial, and automotive sectors. The series emphasizes low on-state resistance and fast switching speeds to improve overall system efficiency. The DI120N04PQ-AQ specifically targets applications demanding high current density and reliable performance in compact form factors.