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Product Detailed Parameters
- Description：MOSFET POWERQFN 5X6 N 40V
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：145A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.5mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：115 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7000 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：75W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (5x6)
- Package / Case：8-PowerTDFN
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Overview
The DI145N04PQ-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact QFN5x6 or TDSON-8 package. It features a drain-source voltage (VDSS) of 40 V and a continuous drain current (ID) of 125 A at 25°C case temperature. The device exhibits a low on-state resistance (RDS(on)) of less than 1.5 mΩ at VGS = 10 V and ID = 90 A. With a maximum junction temperature (Tjmax) of 175°C and single pulse avalanche energy (EAS) of 324 mJ, it supports robust switching performance.
Feature Summary
- Low profile, space-saving package design
- Standard level gate drive capability
- Avalanche rated for rugged operation
- Compliant with RoHS, REACH, and Conflict Minerals regulations
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
- Synchronous Rectifiers
Procurement Notes
Verify the specific suffix when ordering. The -AQ suffix indicates the component is undergoing AEC-Q101 qualification processes. Confirm final automotive compliance status directly with the manufacturer prior to integration into qualified automotive systems. Ensure thermal management aligns with the specified RthJC values for optimal performance.
Selection Notes
Select this component for applications requiring high current handling in a small footprint. The 175°C junction temperature rating provides extended thermal headroom compared to standard 150°C devices. Consider the 40V rating and low RDS(on) for efficiency in low-voltage, high-current power stages.
Part Context
This part belongs to Diotec's N-Channel Power MOSFET series designed for commercial and industrial use. It utilizes advanced trench technology to achieve low on-resistance and fast switching speeds within a thermally efficient surface-mount package suitable for automated assembly.
Replacement Considerations
Consult official Diotec documentation for verified cross-reference part numbers. Do not substitute based solely on pin compatibility without verifying electrical parameters such as RDS(on), VDSS, and thermal resistance against the original specifications.
