ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET PWRQFN 5X6 40V 0.0014OHM
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.45mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：61 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3950 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-QFN (5x6)
- Package / Case：8-PowerTDFN
Download product information
Overview
The DI150N04PQ is a single N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a compact QFN5x6 (TDSON-8/DFN5060) surface-mount package. It features a drain-source breakdown voltage of 40 V and supports a continuous drain current of 150 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 1.45 mΩ and a power dissipation rating of 125 W. Key electrical parameters include a gate-source threshold voltage ranging from 2.0 V to 4.0 V, a total gate charge of 61 nC, and a peak avalanche energy capability of 1620 mJ. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Low profile, space-saving package design
- Standard level gate driver compatibility
- Low on-state resistance for efficiency
- Fast switching times with low gate charge
- Avalanche rated for robustness
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Power Tools
- Synchronous Rectifiers
Procurement Notes
Verify the specific ordering suffix when purchasing. The standard DI150N04PQ designation indicates commercial or industrial grade components. Suffixes such as -Q denote AEC-Q101 compliance, while -AQ signifies full AEC-Q101 qualification. Confirm the required reliability grade matches your application needs before procurement.
Selection Notes
Select this component for applications requiring high current handling in a small footprint. The 40V rating and 150A capacity suit low-voltage DC systems. Ensure thermal management aligns with the <1.0 K/W junction-to-case thermal resistance. Verify that the logic-level gate drive requirements match the 2.0V to 4.0V threshold voltage specifications.
Part Context
This part belongs to the DIxxNxx-PQ series of N-Channel Power MOSFETs from Diotec Semiconductor. These devices utilize silicon technology and are designed for commercial and industrial use. The series offers various voltage ratings and current capacities within the same PowerQFN 5x6 package family to facilitate standardized board layouts across different product designs.
Replacement Considerations
Check for DI150N03PQ if a 30V rating is acceptable. For automotive-grade equivalents, consider DI150N04PQ-AQ. Verify pinout and thermal characteristics against any alternative suppliers.
