DI170N04D2-AQ

$1.11

Description：MOSFET D2PAK N 40V 170A
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:6a324278b0f4 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET D2PAK N 40V 170A
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.5mOhm @ 90A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：162 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：8325 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：89.2W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-263AB (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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DI170N04D2-AQ

Overview

The DI170N04D2-AQ is an N-Channel Power MOSFET in a TO-263AB (D2PAK) package. It features a Drain-Source voltage of 40 V, continuous drain current of 170 A at 25°C case temperature, and peak drain current of 720 A. The on-state resistance is typically 1.1 mΩ with a maximum of 1.5 mΩ at VGS = 10 V and ID = 90 A. Gate threshold voltage ranges from 1 V to 2 V. Total gate charge is typically 162 nC. Avalanche energy rating is 395 mJ. Thermal resistance junction-to-case is less than 1.68 K/W. Maximum junction temperature is 175°C.

Feature Summary

Advanced Trench Technology for low on-state resistance
Logic Level Gate Drive capability
Avalanche rated performance
Fast switching times with low gate charge

Applications

DC/DC Converters
Power Supplies
DC Drives
Synchronous Rectifiers

Procurement Notes

Verify the -AQ suffix indicates the component is currently undergoing AEC-Q101 qualification rather than being fully compliant. Confirm the specific revision date of the datasheet before finalizing design-in decisions. Ensure thermal management meets the specified junction-to-case resistance requirements for high-current operation.

Selection Notes

Select this component for applications requiring high continuous current handling up to 170 A and robust avalanche energy tolerance. The logic level gate drive simplifies driver circuit design. Verify that the TO-263AB package fits the available PCB space and that heat sinking capabilities align with the 89.2 W power dissipation rating at 25°C case temperature.

Part Context

This part belongs to Diotec Semiconductor's N-Channel Power MOSFET lineup utilizing advanced trench technology. The standard DI170N04D2 variant serves commercial and industrial grades, while the -AQ suffix denotes automotive-grade qualification status under development. It is designed for high-efficiency power conversion and motor control environments.