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Product Detailed Parameters
- Description：DI198N15D2
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：198A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：86.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5930 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：357W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263AB (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The DI198N15D2 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TO-263AB (D2PAK) package. It features a drain-source voltage of 150 V and a continuous drain current of 198 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 4.6 mΩ at VGS = 10 V. Key electrical parameters include a total gate charge of 86.5 nC, forward transconductance of 80 S, and a single pulse avalanche energy rating of 900 mJ. Thermal characteristics specify a junction-to-case thermal resistance below 0.35 K/W.
Feature Summary
- Advanced Trench Technology for low on-state resistance
- Avalanche rated capability for robust operation
- Standard Level Gate Drive compatibility
- Fast switching times with low gate charge
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Synchronous Rectifiers
Procurement Notes
Verify the specific suffix designation when ordering, as variants such as -Q denote AEC-Q101 compliance while -AQ indicates qualification status. Confirm that the required automotive or commercial grade aligns with the project specifications before finalizing procurement. Ensure the component matches the exact part number to avoid discrepancies in performance ratings and packaging configurations.
Selection Notes
Select this component for high-current applications requiring low conduction losses and fast switching speeds. The 150 V rating and 198 A current capacity make it suitable for industrial power stages. Evaluate the thermal management requirements based on the specified thermal resistance values to ensure reliable operation within the -55°C to +175°C junction temperature range.
Part Context
This device belongs to Diotec's portfolio of discrete semiconductor solutions designed for modern electronics. It utilizes advanced trench technology to achieve high performance in a standard D2PAK surface-mount package. The product line targets commercial and industrial markets, offering reliability through RoHS compliance and conflict mineral adherence.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter overlaps with potential alternatives from other manufacturers before implementation.
FAQ
What is the maximum single pulse avalanche energy?
The DI198N15D2 supports a single pulse avalanche energy of 900 mJ under test conditions of VDD = 90 V, VGS = 10 V, L = 0.5 mH, and IAS = 60 A.
Does the DI198N15D2 support automotive standards?
The base DI198N15D2 model is for commercial/industrial use. Automotive-grade versions are available with specific suffixes: -Q denotes AEC-Q101 compliance, and -AQ indicates AEC-Q101 qualification.
