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Product Detailed Parameters
- Description：MOSFET D2PAK N 40V 200A
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.55mOhm @ 120A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：90 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5832 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：225W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263AB (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The DI200N04D2 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TO-263AB (D2PAK) package. It features advanced trench technology with a drain-source voltage of 40 V and a continuous drain current of 200 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 1.55 mΩ and supports a peak drain current of 800 A. It offers a power dissipation rating of 225 W and an avalanche energy capability of 625 mJ. Thermal performance includes a junction-to-case thermal resistance below 0.556 K/W, operating within a temperature range of -55°C to +150°C.
Feature Summary
- Advanced Trench Technology for low on-state resistance
- Avalanche rated for robust transient handling
- Standard Level Gate Drive compatibility
- Fast switching times with low gate charge
Applications
- DC/DC Converters
- Power Supplies
- DC Drives
- Synchronous Rectifiers
Procurement Notes
Verify the specific ordering suffix when purchasing. Standard versions are commercial or industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm RoHS exemption details under section 7a-I if required. Ensure the component matches the exact marking code and datasheet version before integration into designs.
Selection Notes
Select this component for high-current applications requiring low conduction losses. The 40 V rating suits low-voltage DC systems. Evaluate thermal management requirements based on the 225 W dissipation limit and RthJC value. Consider the 800 A peak current capability for surge conditions. Verify gate drive levels against the standard threshold specifications for optimal switching performance.
Part Context
This part belongs to Diotec's N-Channel Power MOSFET lineup utilizing advanced trench technology. It is designed for commercial and industrial grade applications. The product line emphasizes high efficiency through low on-state resistance and fast switching characteristics suitable for modern power electronics.
Replacement Considerations
Check pinout compatibility with TO-263AB packages. Compare electrical parameters such as VDSS, ID, and RDS(on). Verify thermal resistance values and package mounting dimensions. Ensure switching speed and gate charge characteristics align with existing circuit designs.
