DI200N10D2

$2.78

Description：MOSFET D2PAK N 100V 200A
Series：-
Mfr：Diotec Semiconductor
Package：Bulk

SKU:61f0ad5bf84a Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET D2PAK N 100V 200A
Series：-
Mfr：Diotec Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.3mOhm @ 120A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：262 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：16800 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：340W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263AB (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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DI200N10D2

Overview

The DI200N10D2 is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TO-263AB (D2PAK) package. It features a drain-source voltage of 100 V and a continuous drain current of 200 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 2.3 mΩ at VGS = 10 V and ID = 120 A. Power dissipation reaches 340 W at 25°C, with a peak drain current capability of 950 A. Single pulse avalanche energy is rated at 451 mJ under specified test conditions. The junction temperature range spans from -55°C to +175°C.

Feature Summary

Advanced Trench Technology for low on-state resistance
Avalanche rated for robust operation
Fast switching times with low gate charge
Standard Level Gate Drive compatibility

Applications

DC/DC Converters
Power Supplies
DC Drives
Synchronous Rectifiers

Procurement Notes

Verify the specific suffix when ordering. The base model represents commercial or industrial grade components. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes qualification status. Confirm these designations against project requirements before procurement to ensure correct reliability grading.

Selection Notes

Select this component for high-current applications requiring low conduction losses. Ensure adequate thermal management is provided, as power dissipation ratings are based on case temperature measurements. Verify that the gate drive circuitry supports standard level thresholds. Check transient thermal impedance curves for pulsed load scenarios to prevent junction overheating.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup designed for general-purpose power switching. It utilizes advanced trench technology to achieve high performance within a D2PAK outline. The series targets efficiency improvements in DC conversion and motor control systems through reduced internal resistance and optimized switching characteristics.