SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DI2A2N100D1K-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a TO-252AA (D-PAK) package. It features a Drain-Source voltage of 1000 V and a continuous drain current of 2.2 A at 25°C case temperature. The device has a maximum power dissipation of 30 W and a low on-state resistance of 6.8 Ω max. It supports a junction temperature up to 150°C and includes avalanche-rated characteristics with an energy rating of 125 mJ.
Verify the specific suffix designation when ordering, as the -AQ suffix indicates the component is currently undergoing AEC-Q101 qualification rather than being fully compliant. Confirm the latest datasheet version directly with Diotec Semiconductor before finalizing design specifications to ensure all electrical parameters remain accurate.
Select this component for commercial and industrial grade applications requiring high voltage isolation. Ensure thermal management strategies account for the specified thermal resistance values. Verify that the required continuous and peak drain currents align with the system's operational demands under varying case temperatures.
This part belongs to Diotec's standard commercial/industrial grade lineup designed for general-purpose power switching. While similar to automotive-grade variants, the -AQ suffix denotes pending qualification status. It serves as a high-voltage solution within the manufacturer's broader portfolio of discrete semiconductors.
No public confirmed substitute part numbers are available in the provided documentation.