DI2A7N70D1K

$1.10

Description：MOSFET DPAK N 700V 1.6OHM 150C
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:52b68a783852 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET DPAK N 700V 1.6OHM 150C
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：700 V
Current - Continuous Drain (Id) @ 25°C：2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：209 pF @ 350 V
FET Feature：-
Power Dissipation (Max)：34.4W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Download product information

DI2A7N70D1K

Overview

The DI2A7N70D1K is an N-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in a TO-252AA (D-PACK) package. It features a drain-source voltage rating of 700 V and a continuous drain current of 2.7 A at 25°C. The device exhibits a maximum on-state resistance of 1.6 Ω at VGS = 10 V and supports a power dissipation of 34.4 W. Key electrical parameters include a gate-source threshold voltage ranging from 2.5 V to 3.5 V, a total gate charge of 5.8 nC, and a single pulse avalanche energy capability of 19.3 mJ. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Advanced Trench Technology for optimized performance
ESD-protected Gate structure
Low on-state resistance characteristics
Fast switching times with avalanche rated design

Applications

DC/DC Converters
Power Supplies
DC Drives
Synchronous Rectifiers

Procurement Notes

Verify the specific ordering suffix when procuring. The standard DI2A7N70D1K designation indicates commercial or industrial grade compliance. Suffixes such as -Q denote AEC-Q101 compliant status, while -AQ signifies AEC-Q101 qualified status. Confirm the required reliability grade matches the application environment before finalizing orders to ensure correct part selection.

Selection Notes

Select this component for high-voltage applications requiring robust avalanche energy handling up to 19.3 mJ. The 700 V breakdown voltage provides significant margin for DC bus systems. Consider the thermal resistance of 36 K/W to ambient for heatsinking requirements. Ensure the gate drive voltage meets the minimum threshold for full enhancement given the 1.6 Ω maximum RDS(on).

Part Context

This device belongs to Diotec's N-Channel Power MOSFET portfolio designed for general-purpose switching. It utilizes advanced trench technology to achieve low conduction losses. The product line includes variants with different automotive qualifications, indicated by specific suffixes. The TO-252AA package offers a balance between power handling capabilities and surface-mount assembly convenience.