DI4A7P06SQ2

Overview

The DI4A7P06SQ2 is a dual P-channel power MOSFET in an SO-8 package. It features a drain-source voltage of -60 V and continuous drain current of -4.7 A at 25°C. The on-state resistance is less than 75 mΩ at VGS = 10 V and ID = 5 A, or 120 mΩ at VGS = 5 V and ID = 4 A. Peak drain current reaches 30 A. Power dissipation is 3.0 W at 25°C. Junction temperature ranges from -55°C to +150°C. Thermal resistance junction-to-terminal is under 42 K/W.

Feature Summary

• Dual MOSFET configuration
• Logic level gate drive capability
• Low on-state resistance
• Fast switching times

Applications

• DC/DC Converters
• Power Supplies
• DC Drives
• Synchronous Rectifiers

Procurement Notes

Verify the specific ordering suffix when purchasing. The base model DI4A7P06SQ2 represents the standard commercial and industrial grade version. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ indicates AEC-Q101 qualification. Confirm the required reliability grade matches the application needs before finalizing orders.

Selection Notes

Select this component for applications requiring a compact dual P-channel solution with logic-level gate drive. Ensure the thermal design accommodates the specified thermal resistance values. Verify that the operating voltage and current limits remain within the absolute maximum ratings defined in the datasheet for reliable operation.

Part Context

This component belongs to Diotec Semiconductor's line of dual power MOSFETs. It is designed for space-saving implementations where two independent P-channel switches are needed in a single surface-mount package. The device supports standard commercial and industrial temperature ranges.

Replacement Considerations

Check pinout compatibility and electrical parameters against existing designs. Verify that alternative dual P-channel MOSFETs meet the -60 V rating and low RDS(on) requirements. Ensure the replacement package matches the SO-8 footprint.