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The DI5A6C04SQ is a complementary N+P channel power MOSFET in an SO-8 package. Q1 (N-channel) features a 40V drain-source voltage, 5.6A continuous current, and <36mΩ on-resistance. Q2 (P-channel) offers -40V breakdown, -4.7A current, and <45mΩ resistance. Both channels operate within a -55°C to +150°C junction temperature range with 1.95W power dissipation. The device includes low gate charge and fast switching characteristics suitable for compact designs.
Verify the specific suffix when ordering. The base model represents commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification status. Confirm RoHS and REACH adherence requirements with the supplier before finalizing procurement specifications.
Select based on required current handling and thermal constraints. Ensure the SO-8 package fits the PCB layout. Evaluate the on-resistance limits against the expected load current to manage heat dissipation effectively within the specified ambient conditions.
This component belongs to Diotec Semiconductor's complementary MOSFET portfolio. It provides integrated dual-channel solutions for applications requiring both high-side and low-side switching capabilities within a single compact footprint.
No public confirmed substitute part numbers are available in the provided documentation.
The suffix -Q indicates that the component is AEC-Q101 compliant.
The maximum junction temperature is +150°C.
Standard versions are commercial/industrial grade. Automotive qualification requires the -Q or -AQ suffix variants.