DI6A7P02SQ

DI6A7P02SQ

$0.12
  • Description:DI6A7P02SQ
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk

SKU:c96ec18b144c Category: Brand:

  
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Product Detailed Parameters

  • Description:DI6A7P02SQ
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:6.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
  • Rds On (Max) @ Id, Vgs:40mOhm @ 3.2A, 4.5V
  • Vgs(th) (Max) @ Id:550mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8.5 nC @ 10 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SO
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

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DI6A7P02SQ

Overview

The DI6A7P02SQ is a P-Channel Power MOSFET manufactured by Diotec Semiconductor, housed in an SO-8 package. It features a drain-source voltage (V_DSS) of -20 V and a continuous drain current (I_D) of -6.7 A at 25°C. The device exhibits a maximum on-state resistance (R_DS(on)) of 40 mΩ at V_GS = 4.5 V and 60 mΩ at V_GS = 2.7 V. Key dynamic parameters include a total gate charge (Q_g) of 8.5 nC, input capacitance (C_iss) of 1500 pF, and turn-on delay time (t_d(on)) of 14 ns. Thermal characteristics specify a power dissipation (P_D) of 2.5 W and a junction-to-ambient thermal resistance (R_thJA) of less than 50 K/W.

Feature Summary

  • Logic level gate drive capability for efficient control
  • Low on-state resistance to minimize conduction losses
  • Fast switching times with low gate charge
  • Space-saving, low-profile SO-8 package

Applications

  • DC/DC Converters
  • Power Supplies
  • DC Drives
  • Synchronous Rectifiers

Procurement Notes

Verify the specific ordering suffix when purchasing. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm that the requested variant matches the required automotive or commercial grade specifications before finalizing orders to ensure correct reliability ratings.

Selection Notes

Select this component for applications requiring a P-Channel MOSFET with a 20 V rating and high current handling up to 6.7 A. The logic-level gate drive allows direct interfacing with standard logic levels. Ensure the PCB layout provides sufficient copper area for the drain terminal to maintain the specified thermal resistance and power dissipation capabilities.

Part Context

This part belongs to Diotec Semiconductor's portfolio of discrete semiconductors, specifically within the MOSFET category. It is designed for commercial and industrial grade applications, offering a balance of performance and compact packaging suitable for modern electronic designs requiring efficient power switching solutions.

Replacement Considerations

Check for variants with different suffixes (-Q or -AQ) if automotive qualification is required. Verify pinout compatibility and electrical parameters against existing designs before substitution.

FAQ

What does the suffix -Q signify for this component?

The suffix -Q indicates that the DI6A7P02SQ is compliant with the AEC-Q101 automotive standard.

Is there a qualified automotive version available?

Yes, the suffix -AQ denotes that the component is qualified according to the AEC-Q101 standard.

DI6A7P02SQDI6A7P02SQ
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