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Product Detailed Parameters
- Description：MOSFET D2PAK N 650V 7.5A
- Series：-
- Mfr：Diotec Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：430mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18.4 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：722 pF @ 325 V
- FET Feature：-
- Power Dissipation (Max)：62.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263AB (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The DI7A5N65D2K-AQ is an N-Channel Power MOSFET from Diotec Semiconductor, utilizing advanced trench technology for high-performance switching. It features a drain-source voltage of 650 V and a continuous drain current of 7.5 A at 25°C case temperature. The device exhibits a low on-state resistance of less than 430 mΩ at VGS = 10 V. With a maximum junction temperature of 150°C and avalanche energy rating of 174 mJ, it supports robust operation in demanding environments.
Feature Summary
- Advanced Trench Technology for optimized performance
- ESD-protected gate structure
- Avalanche rated capability
- Standard Level Gate Drive compatibility
Applications
- Power Supplies
- Power Factor Correction (PFC)
- High Voltage DC Drives
- Battery Management Systems (BMS)
Procurement Notes
Verify the specific suffix -AQ to confirm AEC-Q101 qualification status, as standard versions may differ. Ensure thermal management aligns with the specified power dissipation limits at given case temperatures. Confirm RoHS compliance requirements against project specifications. Check for any recent product change notices regarding package or material updates before finalizing procurement plans.
Selection Notes
Select this component for applications requiring high voltage blocking and moderate current handling in compact packages. Consider the thermal resistance values when designing heat sinks or PCB copper areas. Evaluate the gate charge parameters against driver capabilities to ensure efficient switching speeds. Verify that the avalanche energy rating meets the circuit's transient protection needs.
Part Context
This part belongs to Diotec's N-Channel Power MOSFET lineup, designed for commercial and industrial grade applications. The -AQ suffix indicates automotive qualification under AEC-Q101 standards. It is housed in a TO-263AB (D2PAK) package, suitable for surface mount assembly with taped and reeled delivery options.
Replacement Considerations
Consult official Diotec documentation for direct substitutes. No public confirmed substitute part numbers are available in the provided source material.
