DI7A6N10SQ

$0.89

Description：MOSFET SO8 N 100V 0.02OHM 150C
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b76ab2d82115 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET SO8 N 100V 0.02OHM 150C
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：7.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1650 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DI7A6N10SQ

Overview

The DI7A6N10SQ is an N-Channel Power MOSFET from Diotec Semiconductor, housed in a compact SO-8 package. It features a Drain-Source voltage (VDSS) of 100 V and a continuous Drain current (ID) of 7.6 A at 25°C. The device exhibits a low on-state resistance (RDS(on)) of less than 20 mΩ, with typical values of 16 mΩ at VGS=10V and 23 mΩ at VGS=6V. Key electrical parameters include a maximum power dissipation (PD) of 2.5 W, a single pulse avalanche energy (EAS) of 416 mJ, and a total gate charge (Qg) of 22 nC. Operating temperatures range from -55°C to +150°C.

Feature Summary

Utilizes Power Trench technology for low on-state resistance and fast switching times.
Features a tiny, space-saving SO-8 package suitable for dense circuit layouts.
Designed with low gate charge characteristics to enhance switching efficiency.
Compliant with RoHS directives and REACH regulations without exemptions.

Applications

Power Management Units
Battery powered devices
Load Switches and Polarity Protection circuits
DC/DC Converters

Procurement Notes

Verify the specific suffix requirements for your application environment. The standard version is designated for commercial and industrial grades. If automotive qualification is required, confirm availability of the -AQ variant which meets AEC-Q101 standards. Ensure ordering specifications match the exact thermal and reliability needs of the target system before finalizing procurement.

Selection Notes

Select this component for applications requiring high current handling in a small footprint. The low RDS(on) minimizes conduction losses, while the 100 V rating provides adequate headroom for 48 V systems. Consider the 2.5 W power dissipation limit and ensure appropriate PCB copper area for thermal management, as the thermal resistance to ambient is specified under specific pad conditions.

Part Context

This part belongs to Diotec's N-Channel Power MOSFET lineup, designed for general-purpose power switching. It complements other discrete semiconductors like rectifiers and TVS diodes in complete protection and conversion solutions. The SO-8 package aligns with industry-standard surface mount assembly processes, facilitating integration into modern electronic manufacturing workflows.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter margins when considering alternative manufacturers' components for direct replacement.

FAQ

What is the maximum single pulse avalanche energy?

The DI7A6N10SQ supports a single pulse avalanche energy of 416 mJ under test conditions of ID = 8 A, VG = 10 V, L = 13 mH, and RG = 25 Ω.

Does the DI7A6N10SQ meet automotive standards?

The standard DI7A6N10SQ is rated for commercial and industrial grades. Automotive-grade versions are available with the -AQ suffix, indicating AEC-Q101 qualification.