DI9405T

$1.13

Description：MOSFET P-CH 20V 4.3A 8-SOIC
Series：*
Mfr：Diodes Incorporated
Package：Cut Tape (CT)

SKU:3c389aa32afd Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 4.3A 8-SOIC
Series：*
Mfr：Diodes Incorporated
Package：Cut Tape (CT)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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DI9405T

Overview

The DI9405T is a single P-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It utilizes high cell density DMOS technology and is housed in an SO-8 plastic case. The device supports a drain-source voltage of -20 V and a gate-source voltage of ±20 V. Continuous drain current reaches ±4.3 A at 25°C ambient temperature, with a maximum power dissipation of 2.5 W under standard mounting conditions. Operating and storage temperatures range from -55°C to +150°C.

Feature Summary

High cell density DMOS technology
Low on-state resistance
Fast switching speed
High transient tolerance

Applications

Procurement Notes

Verify the specific manufacturer designation for the DI9405T model, as official datasheets are primarily associated with Onsemi. Confirm that the component meets RoHS compliance standards before integration. Ensure thermal management aligns with the specified junction-to-ambient resistance values for your circuit board design.

Selection Notes

Select this component for applications requiring efficient power switching with low conduction losses. Consider the thermal resistance characteristics when designing heat dissipation strategies. Verify compatibility with logic-level gate drive voltages to ensure optimal performance within the safe operating area.

Part Context

This component belongs to the category of power semiconductors, specifically single P-channel MOSFETs. It is designed for general-purpose switching applications where compact packaging and reliable performance are required. The SO-8 package facilitates surface-mount assembly.