DI9430T

Description：MOSFET P-CH 20V 5.3A 8-SOP
Series：*
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)

SKU:893a3a8ba9c3 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 5.3A 8-SOP
Series：*
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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DI9430T

Overview

The DI9430T is a single P-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It utilizes high cell density DMOS technology to achieve low on-state resistance and fast switching speeds. The device features a maximum drain-source voltage of -20 V and continuous drain current ratings up to ±5.3 A at 25°C. It operates within a junction temperature range of -55°C to +150°C and is housed in an SO-8 plastic case.

Feature Summary

High cell density DMOS technology for enhanced performance
Low on-state resistance characteristics
Fast switching speed capability
High transient tolerance

Applications

Power management circuits
Load switch applications
DC-DC converter designs

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm package type and reel specifications. Ensure thermal design aligns with datasheet notes regarding copper mounting pad sizes, as thermal resistance values vary significantly based on PCB layout. Confirm RoHS compliance status through official component declarations before integration into final assemblies.

Selection Notes

Select this component when a robust P-channel MOSFET with -20V rating is required. Evaluate thermal requirements carefully, as power dissipation capabilities depend heavily on the available copper area for heat sinking. Consider the gate threshold voltage variations across temperature ranges to ensure reliable switching logic compatibility in the target application environment.

Part Context

This part belongs to the family of single P-channel enhancement mode field effect transistors produced by Diodes Incorporated. These devices are designed for general-purpose power switching applications requiring efficient current handling and rapid response times within compact surface-mount packages suitable for automated assembly processes.