DI9435T

$2.31

Description：MOSFET P-CH 30V 5.3A 8-SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)

SKU:03464ba26700 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 5.3A 8-SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：50mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：950 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-TSOP (0.130", 3.30mm Width)

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DI9435T

Overview

The DI9435T is a single P-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It utilizes high cell density DMOS technology and is housed in an SO-8 plastic case. The device features a drain-source voltage of -30 V, continuous drain current of ±5.3 A, and maximum power dissipation of 2.5 W at 25°C. Thermal resistance from junction to ambient is 50 °C/W with a 1 in² copper pad. Operating temperature range spans from -55°C to +150°C.

Feature Summary

High cell density DMOS technology
Low on-state resistance
Fast switching speed
High transient tolerance

Applications

Procurement Notes

Verify the component against official datasheet DS11503 Rev. F-4 specifications. Confirm package type is SO-8 and manufacturer is Diodes Incorporated. Ensure electrical parameters match the provided ratings before integration into designs.

Selection Notes

Select this component for applications requiring a single P-channel MOSFET in an SO-8 package. Consider thermal design constraints as power dissipation varies significantly based on copper mounting pad area. Evaluate gate threshold voltage requirements against circuit drive capabilities.

Part Context

This part belongs to the family of single P-channel enhancement mode field effect transistors produced by Diodes Incorporated. It is designed for general-purpose switching applications where low on-resistance and fast switching are required within a compact surface-mount footprint.